IPD50N06S409ATMA2 vs IPD50N10S3L16ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50N06S409ATMA2 disebabkan oleh Infineon dan IPD50N10S3L16ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon
IPD50N10S3L16ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPD50N06S409ATMA2 | IPD50N10S3L16ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | N-Channel MOSFET (OptiMOS) | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc | 50 A | — |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Kiraan Pin | 3 (2 + Tab) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD50N10S3L16ATMA1 |
| Series | — | OptiMOS-T |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 50 A |
| Pulsed Drain Current (I_DM) | — | 200 A |
| R_DS(on) max @ V_GS=10V | — | 15 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | 2.5 V (typ) |
| Power Dissipation (P_D, T_C=25C) | — | 100 W |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Packaging | — | Tape & Reel |