IPD50N10S3L16ATMA1 vs IPC50N04S5L5R5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50N10S3L16ATMA1 disebabkan oleh Infineon dan IPC50N04S5L5R5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD50N10S3L16ATMA1 IPC50N04S5L5R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPD50N10S3L16ATMA1 —
Series OptiMOS-T —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D, T_C=25C) 50 A —
Pulsed Drain Current (I_DM) 200 A —
R_DS(on) max @ V_GS=10V 15 mΩ —
Gate Threshold Voltage (V_GS(th)) 2.5 V (typ) —
Power Dissipation (P_D, T_C=25C) 100 W —
Kemasan PG-TO252-3-11 (DPAK) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C -55 °C to +175 °C
Automotive Qualification AEC-Q101 —
Status RoHS Compliant —
Packaging Tape & Reel —
Mode — Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
AEC-Q101 Qualification — Qualified (automotive grade)
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

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