IPD65R380E6ATMA1 vs IPB014N06NATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD65R380E6ATMA1 disebabkan oleh Infineon dan IPB014N06NATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD65R380E6ATMA1 IPB014N06NATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series CoolMOS™ E6 —
Jenis Transistor N-Channel MOSFET —
Technology Superjunction (CoolMOS™) OptiMOS 5 (trench-gate)
Drain-Source Voltage (V_DS) 650 V —
Continuous Drain Current (I_D) at T_C 10.6 A —
R_DS(on) max at V_GS=10V 380 mΩ —
R_DS(on) test conditions 3.2 A, 10 V —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Threshold Voltage (V_GS(th)) 3.5 V typ —
Gate Charge (Q_G) 39 nC at 10 V —
Input Capacitance (C_iss) 710 pF at 100 V —
Power Dissipation (P_D) at T_C 83 W —
Gambaran Suhu Operasi -55 °C to +150 °C —
Kemasan PG-TO252-3 (DPAK), surface mount PG-TO263-7 (D2PAK-7)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant —
Aras MSL 1 —
Transistor Polarity — N-Channel
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Ta — 34 A
Continuous Drain Current (ID) at Tc — 180 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 214 W
On-Resistance RDS(on) max — 1.4 mΩ at VGS=10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Suhu Hubungan Operasi — -55 °C to +175 °C
Avalanche Rating — 100% avalanche tested
Qualification — JEDEC qualified for target applications
Primary Application — Synchronous rectification, motor control

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