IPD65R380E6ATMA1 vs IPD50N10S3L16ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD65R380E6ATMA1 disebabkan oleh Infineon dan IPD50N10S3L16ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD50N10S3L16ATMA2 - 100V 50A 15mΩ N-Ch OptiMOS-T MOSFET | Infineon
IPD50N10S3L16ATMA2 ✓ AktifPengandingan Spesifikasi
| Parametr | IPD65R380E6ATMA1 | IPD50N10S3L16ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ E6 | OptiMOS-T |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS™) | — |
| Drain-Source Voltage (V_DS) | 650 V | — |
| Continuous Drain Current (I_D) at T_C | 10.6 A | — |
| R_DS(on) max at V_GS=10V | 380 mΩ | — |
| R_DS(on) test conditions | 3.2 A, 10 V | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | — |
| Gate Charge (Q_G) | 39 nC at 10 V | — |
| Input Capacitance (C_iss) | 710 pF at 100 V | — |
| Power Dissipation (P_D) at T_C | 83 W | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C | -55 °C to +175 °C (junction) |
| Kemasan | PG-TO252-3 (DPAK), surface mount | PG-TO252-3-11 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | 1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 50 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| Maximum R_DS(on) at VGS=10V | — | 15 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Power Dissipation (Ptot) at Tc=25°C | — | 100 W |
| Kiraan Pin | — | 3 (2 + Tab) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Delivery Form | — | Tape and Reel (T&R) |