IPD65R380E6ATMA1 vs IPD50N10S3L16ATMA2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD65R380E6ATMA1 sa pamamagitan ng Infineon at IPD50N10S3L16ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IPD65R380E6ATMA1 IPD50N10S3L16ATMA2
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ E6 OptiMOS-T
Uri ng Transistor N-Channel MOSFET —
Technology Superjunction (CoolMOS™) —
Drain-Source Voltage (V_DS) 650 V —
Continuous Drain Current (I_D) at T_C 10.6 A —
R_DS(on) max at V_GS=10V 380 mΩ —
R_DS(on) test conditions 3.2 A, 10 V —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Threshold Voltage (V_GS(th)) 3.5 V typ —
Gate Charge (Q_G) 39 nC at 10 V —
Input Capacitance (C_iss) 710 pF at 100 V —
Power Dissipation (P_D) at T_C 83 W —
Hanay ng Temperature na Operasyon -55 °C to +150 °C -55 °C to +175 °C (junction)
Packhaging PG-TO252-3 (DPAK), surface mount PG-TO252-3-11 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Level ng MSL 1 1 (per JEDEC J-STD-020)
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc=25°C — 50 A
Pulsed Drain Current (IDM) — 180 A
Maximum R_DS(on) at VGS=10V — 15 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Total Power Dissipation (Ptot) at Tc=25°C — 100 W
Bilang ng Pin — 3 (2 + Tab)
Automotive Qualification — AEC-Q101 qualified
Delivery Form — Tape and Reel (T&R)

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