IPD78CN10NGATMA1 vs IPD046N08N5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD78CN10NGATMA1 disebabkan oleh Infineon dan IPD046N08N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD78CN10NGATMA1 | IPD046N08N5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 2 | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 100 V | 80 V |
| Continuous Drain Current (ID) at Tc=25C | 13 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 78 mOhm | 4.6 mΩ |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) Max at Tc=25C | 31 W | — |
| Operating Junction Temperature Max | 175 C | — |
| Kemasan / Case | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain, Source) + Tab | — |
| Lead Plating | Pb-free (Matte Tin) | — |
| RoHS Compliance | Compliant | — |
| JEDEC Qualification | Qualified per JEDEC1 for target application | — |
| Technology | OptiMOS 2 Power-Transistor | OptiMOS™ 5 trench MOSFET |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Product Series | — | OptiMOS™ 5 80V |
| Continuous Drain Current (ID) at Tc=25°C | — | 90 A |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Power Dissipation (PD) at Tc=25°C | — | 125 W |
| Gambaran Suhu Hubungan Operasi | — | -55 °C to +175 °C |
| Status RoHS | — | ROHS3 Compliant |
| Configuration | — | Single N-channel, 3-pin (Gate / Drain tab / Source) |