IPD78CN10NGATMA1 vs IPD046N08N5ATMA1 Comparison
Detailed side-by-side comparison of IPD78CN10NGATMA1 by Infineon and IPD046N08N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD78CN10NGATMA1 | IPD046N08N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 2 | — |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 100 V | 80 V |
| Continuous Drain Current (ID) at Tc=25C | 13 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 78 mOhm | 4.6 mΩ |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) Max at Tc=25C | 31 W | — |
| Operating Junction Temperature Max | 175 C | — |
| Package / Case | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) + Tab | — |
| Lead Plating | Pb-free (Matte Tin) | — |
| RoHS Compliance | Compliant | — |
| JEDEC Qualification | Qualified per JEDEC1 for target application | — |
| Technology | OptiMOS 2 Power-Transistor | OptiMOS™ 5 trench MOSFET |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Product Series | — | OptiMOS™ 5 80V |
| Continuous Drain Current (ID) at Tc=25°C | — | 90 A |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Power Dissipation (PD) at Tc=25°C | — | 125 W |
| Operating Junction Temperature Range | — | -55 °C to +175 °C |
| RoHS Status | — | ROHS3 Compliant |
| Configuration | — | Single N-channel, 3-pin (Gate / Drain tab / Source) |