IPD80R750P7ATMA1 vs IPD65R380E6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD80R750P7ATMA1 disebabkan oleh Infineon dan IPD65R380E6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD80R750P7ATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS™ E6 |
| Part Number | IPD80R750P7ATMA1 | — |
| FET Type | N-Channel | — |
| Technology | CoolMOS (Super-Junction) | Superjunction (CoolMOS™) |
| Drain-Source Voltage (VDS) | 800 V | — |
| Continuous Drain Current (ID) at TC=25C | 7 A | — |
| On-Resistance (RDS(on)) max at VGS=10V | 750 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typical) | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| Power Dissipation (PD) at TC=25C | 51 W | — |
| Kemasan / Case | PG-TO252-3 (DPAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55C to +150C (TJ) | — |
| Gate Protection | Integrated Zener (ESD protected) | — |
| Packaging | Tape & Reel (ATMA1) | — |
| Status RoHS | Compliant | Compliant |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |
| Gambaran Suhu Operasi | — | -55 °C to +150 °C |
| Kemasan | — | PG-TO252-3 (DPAK), surface mount |
| Aras MSL | — | 1 |