IPD80R750P7ATMA1 vs IPD65R380E6ATMA1 Comparison

Detailed side-by-side comparison of IPD80R750P7ATMA1 by Infineon and IPD65R380E6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD80R750P7ATMA1 IPD80R750P7ATMA1 - 800V CoolMOS P7 MOSFET, 7A | Infineon

IPD80R750P7ATMA1 - 800V CoolMOS P7 MOSFET, 7A | Infineon

IPD80R750P7ATMA1 βœ“ Active

Specification Comparison

Parameter IPD80R750P7ATMA1 IPD65R380E6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOSβ„’ E6
Part Number IPD80R750P7ATMA1 β€”
FET Type N-Channel β€”
Technology CoolMOS (Super-Junction) Superjunction (CoolMOSβ„’)
Drain-Source Voltage (VDS) 800 V β€”
Continuous Drain Current (ID) at TC=25C 7 A β€”
On-Resistance (RDS(on)) max at VGS=10V 750 mOhm β€”
Gate Threshold Voltage (VGS(th)) 3.5 V (typical) β€”
Gate Charge (Qg) typ [DATA_NEEDED: Qg value] β€”
Power Dissipation (PD) at TC=25C 51 W β€”
Package / Case PG-TO252-3 (DPAK) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C (TJ) β€”
Gate Protection Integrated Zener (ESD protected) β€”
Packaging Tape & Reel (ATMA1) β€”
RoHS Status Compliant Compliant
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (V_DS) β€” 650 V
Continuous Drain Current (I_D) at T_C β€” 10.6 A
R_DS(on) max at V_GS=10V β€” 380 mΞ©
R_DS(on) test conditions β€” 3.2 A, 10 V
Gate-Source Voltage (V_GS) max β€” Β±20 V
Gate Threshold Voltage (V_GS(th)) β€” 3.5 V typ
Gate Charge (Q_G) β€” 39 nC at 10 V
Input Capacitance (C_iss) β€” 710 pF at 100 V
Power Dissipation (P_D) at T_C β€” 83 W
Operating Temperature Range β€” -55 Β°C to +150 Β°C
Package β€” PG-TO252-3 (DPAK), surface mount
MSL Level β€” 1

Datasheets & Resources

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