IPD90N04S403ATMA1 vs IPD046N08N5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD90N04S403ATMA1 disebabkan oleh Infineon dan IPD046N08N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD90N04S403ATMA1 | IPD046N08N5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 90 A | — |
| On-State Resistance (R_DS(on)) | 3.2 mOhm typical at V_GS = 10 V | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 94 W | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Kemasan | PG-TO252-3-313 (DPAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Aras MSL | MSL1 (peak reflow up to 260C) | 1 (per JEDEC J-STD-020) |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | — |
| RoHS Compliance | Compliant (Green Package) | — |
| Technology | Trench MOSFET (OptiMOS-T2) | OptiMOS™ 5 trench MOSFET |
| Product Series | — | OptiMOS™ 5 80V |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 80 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 90 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 4.6 mΩ |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Power Dissipation (PD) at Tc=25°C | — | 125 W |
| Gambaran Suhu Hubungan Operasi | — | -55 °C to +175 °C |
| Kemasan / Case | — | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) |
| Status RoHS | — | ROHS3 Compliant |
| Configuration | — | Single N-channel, 3-pin (Gate / Drain tab / Source) |