IPD90P04P405ATMA2 vs IPD90P04P4L04ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD90P04P405ATMA2 disebabkan oleh Infineon dan IPD90P04P4L04ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD90P04P405ATMA2 IPD90P04P4L04ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -40 V —
Continuous Drain Current (ID, Tc) -90 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD, Tc) 125 W —
On-Resistance RDS(on) at VGS = -10 V 4.7 mΩ (typical) —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Gambaran Suhu Operasi -55 °C to +175 °C (Tj) -55 C to +175 C
Kemasan PG-TO252-3-313 (DPAK, surface mount) PG-TO252-3-313 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) —
Process Technology OptiMOS-P2 (trench + field plate) —
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Part Number — IPD90P04P4L04ATMA2
Manufacturer — Infineon Technologies
Family — OptiMOS-P2
Channel Type — P-Channel
Drain-Source Voltage (Vds) — -40 V
Continuous Drain Current (Id) at Tc=25C — -90 A
Power Dissipation (Pd) at Tc=25C — 125 W
On-State Resistance Rds(on) typ at Vgs=-10V — 4.3 mOhm
Gate Threshold Voltage Vgs(th) typ — [DATA_NEEDED: Vgs(th) typical value]
Maximum Junction Temperature — 175 C
Bilangan Pin — 3 (2 + Tab)
Automotive Qualification — AEC-Q101 qualified

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