IPG16N10S461AATMA1 vs BSC0902NSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG16N10S461AATMA1 disebabkan oleh Infineon dan BSC0902NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPG16N10S461AATMA1 BSC0902NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Type Dual N-Channel MOSFET Array —
Technology OptiMOS™ trench —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 16 A —
On-Resistance R_DS(on) typ. 61 mΩ —
Total Power Dissipation (Ptot) 29 W (T_C = 25°C) —
Configuration 2 N-Channel (Dual, separate) —
Gate Threshold Voltage V_GS(th) typ. [DATA_NEEDED: gate threshold voltage] —
Maximum Junction Temperature 175 °C —
Gambaran Suhu Operasi -55 °C to +175 °C -55C to +150C (junction)
Kemasan PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-6 (TDSON-8)
Jenis Pemasangan Surface Mount Surface Mount
Terminal Count 8 —
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Built-in Body Diode Yes —
Channel Mode Enhancement —
Product Family — OptiMOS 30V
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TA=25C — 23 A
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-State Resistance RDS(on) Max at VGS=10V — 2.8 mOhm
Gate Charge QG(0V..10V) — 24 nC
Output Charge QOSS — 17 nC
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 48 W
Built-in Diode — Yes (single with built-in diode)
Lead-Free — Yes
Boson Bebas — Yes

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