IPG20N04S4L11ATMA1 vs IPG16N10S461AATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N04S4L11ATMA1 disebabkan oleh Infineon dan IPG16N10S461AATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPG20N04S4L11ATMA1 IPG16N10S461AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type 2 N-Channel (Dual) —
FET Feature Logic Level Gate —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ 25C 20 A per channel —
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A 11.6 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Maximum Power Dissipation (PD) 41 W —
Gambaran Suhu Operasi -55C to +175C -55 °C to +175 °C
Kemasan PG-TDSON-8-4 (Super S08 / 8-TDSON EP) PG-TDSON-8-10 (Wettable Flank)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (260C peak reflow) [DATA_NEEDED: MSL rating]
Avalanche Rating 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Qualified —
Status RoHS Compliant (Green Product) Compliant
Technology OptiMOS-T2 trench OptiMOS™ trench
Manufacturer — Infineon Technologies
Product Type — Dual N-Channel MOSFET Array
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 16 A
On-Resistance R_DS(on) typ. — 61 mΩ
Total Power Dissipation (Ptot) — 29 W (T_C = 25°C)
Configuration — 2 N-Channel (Dual, separate)
Gate Threshold Voltage V_GS(th) typ. — [DATA_NEEDED: gate threshold voltage]
Maximum Junction Temperature — 175 °C
Terminal Count — 8
Built-in Body Diode — Yes
Channel Mode — Enhancement

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