IPL60R060CFD7AUMA1 vs IPD60R210PFD7SAUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL60R060CFD7AUMA1 disebabkan oleh Infineon dan IPD60R210PFD7SAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPL60R060CFD7AUMA1 IPD60R210PFD7SAUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ CFD7 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D, Tc) 40 A —
Power Dissipation (P_D, Tc) 219 W —
R_DS(on) (max) at V_GS = 10 V 60 mΩ —
R_DS(on) (typ, datasheet) 48 mΩ —
Gate Charge (Q_G, typ) at V_GS = 10 V 79 nC —
Input Capacitance (C_iss) 3193 pF —
Output Capacitance (C_oss) 62 pF —
Gate-Source Voltage (V_GS) ±20 V (max) —
Gate Threshold Voltage (V_GS(th), typ) 4.5 V —
Gambaran Suhu Operasi -40 °C to +150 °C -55C to +150C (TJ)
Kemasan PG-VSON-4-1 (Surface Mount) —
Jenis Pemasangan Surface Mount Surface Mount (SMT)
Aras MSL [DATA_NEEDED: MSL Level] —
Status RoHS Compliant —
Product Family — CoolMOS PFD7
Technology — Superjunction (CoolMOS) N-Channel Power MOSFET
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc) — 16 A
On-Resistance (RDS(on), max) — 210 mOhm
Power Dissipation (Ptot, Tc=25C) — 64 W
Gate Threshold Voltage (VGS(th), typ) — 3.5 V
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Package Type — TO-252 (DPAK)
Manufacturer Package Designator — PG-TO252-3-344
Pin Configuration — 3-Pin (2+Tab) - Gate, Drain (tab), Source
Lead-Free / RoHS — Yes (compliant)
Application Segment — Consumer-grade SMPS

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