IPL60R060CFD7AUMA1 vs IPD60R210PFD7SAUMA1 比較
詳細並排比較 IPL60R060CFD7AUMA1 由 Infineon 與 IPD60R210PFD7SAUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon
IPD60R210PFD7SAUMA1 ✓ 啟用中規格比較
| 參數 | IPL60R060CFD7AUMA1 | IPD60R210PFD7SAUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ CFD7 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D, Tc) | 40 A | — |
| Power Dissipation (P_D, Tc) | 219 W | — |
| R_DS(on) (max) at V_GS = 10 V | 60 mΩ | — |
| R_DS(on) (typ, datasheet) | 48 mΩ | — |
| Gate Charge (Q_G, typ) at V_GS = 10 V | 79 nC | — |
| Input Capacitance (C_iss) | 3193 pF | — |
| Output Capacitance (C_oss) | 62 pF | — |
| Gate-Source Voltage (V_GS) | ±20 V (max) | — |
| Gate Threshold Voltage (V_GS(th), typ) | 4.5 V | — |
| 工作溫度範圍 | -40 °C to +150 °C | -55C to +150C (TJ) |
| 封裝 | PG-VSON-4-1 (Surface Mount) | — |
| 安裝類型 | Surface Mount | Surface Mount (SMT) |
| MSL 等級 | [DATA_NEEDED: MSL Level] | — |
| RoHS 狀態 | Compliant | — |
| Product Family | — | CoolMOS PFD7 |
| Technology | — | Superjunction (CoolMOS) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc) | — | 16 A |
| On-Resistance (RDS(on), max) | — | 210 mOhm |
| Power Dissipation (Ptot, Tc=25C) | — | 64 W |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.5 V |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| Package Type | — | TO-252 (DPAK) |
| Manufacturer Package Designator | — | PG-TO252-3-344 |
| Pin Configuration | — | 3-Pin (2+Tab) - Gate, Drain (tab), Source |
| Lead-Free / RoHS | — | Yes (compliant) |
| Application Segment | — | Consumer-grade SMPS |