IPL60R060CFD7AUMA1 vs IPL65R070C7AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL60R060CFD7AUMA1 disebabkan oleh Infineon dan IPL65R070C7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPL60R060CFD7AUMA1 IPL65R070C7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ CFD7 CoolMOS C7
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D, Tc) 40 A —
Power Dissipation (P_D, Tc) 219 W —
R_DS(on) (max) at V_GS = 10 V 60 mΩ —
R_DS(on) (typ, datasheet) 48 mΩ —
Gate Charge (Q_G, typ) at V_GS = 10 V 79 nC —
Input Capacitance (C_iss) 3193 pF —
Output Capacitance (C_oss) 62 pF —
Gate-Source Voltage (V_GS) ±20 V (max) —
Gate Threshold Voltage (V_GS(th), typ) 4.5 V —
Gambaran Suhu Operasi -40 °C to +150 °C —
Kemasan PG-VSON-4-1 (Surface Mount) PG-VSON-4 (surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL Level] [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Technology — Superjunction N-Channel MOSFET
Drain-Source Voltage (VDS) — 650 V
Continuous Drain Current (ID) at TC=25°C — 28 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 70 mΩ (typical)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25°C — 169 W
Avalanche Energy (EAS) — 171 mJ
Suhu Hubungan Operasi — -55°C to +150°C
Configuration — Single with built-in diode
Channel Type — N-Channel
Lead-Free — Yes

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