IPL60R060CFD7AUMA1 vs IPL65R070C7AUMA1 比較

詳細並排比較 IPL60R060CFD7AUMA1 由 Infineon 與 IPL65R070C7AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPL60R060CFD7AUMA1 IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΩ | Infineon

IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΩ | Infineon

IPL60R060CFD7AUMA1 ✓ 啟用中
Infineon
IPL65R070C7AUMA1 IPL65R070C7AUMA1 - 650V 70mΩ CoolMOS C7 MOSFET | Infineon

IPL65R070C7AUMA1 - 650V 70mΩ CoolMOS C7 MOSFET | Infineon

IPL65R070C7AUMA1 ✓ 啟用中

規格比較

參數 IPL60R060CFD7AUMA1 IPL65R070C7AUMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ CFD7 CoolMOS C7
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D, Tc) 40 A —
Power Dissipation (P_D, Tc) 219 W —
R_DS(on) (max) at V_GS = 10 V 60 mΩ —
R_DS(on) (typ, datasheet) 48 mΩ —
Gate Charge (Q_G, typ) at V_GS = 10 V 79 nC —
Input Capacitance (C_iss) 3193 pF —
Output Capacitance (C_oss) 62 pF —
Gate-Source Voltage (V_GS) ±20 V (max) —
Gate Threshold Voltage (V_GS(th), typ) 4.5 V —
工作溫度範圍 -40 °C to +150 °C —
封裝 PG-VSON-4-1 (Surface Mount) PG-VSON-4 (surface mount)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL Level] [DATA_NEEDED: MSL rating]
RoHS 狀態 Compliant Compliant
Technology — Superjunction N-Channel MOSFET
Drain-Source Voltage (VDS) — 650 V
Continuous Drain Current (ID) at TC=25°C — 28 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 70 mΩ (typical)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25°C — 169 W
Avalanche Energy (EAS) — 171 mJ
工作接面溫度 — -55°C to +150°C
Configuration — Single with built-in diode
Channel Type — N-Channel
Lead-Free — Yes

資料表與資源

瀏覽所有產品 建立 BOM 索取報價