IPL60R085P7AUMA1 vs IPB60R280P7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL60R085P7AUMA1 disebabkan oleh Infineon dan IPB60R280P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPL60R085P7AUMA1 IPB60R280P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $0.88
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 39 A —
Continuous Drain Current (ID, Tc=100°C) 24 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance (RDS(on)) 85 mΩ at VGS=10 V —
Gate Threshold Voltage (VGS(th)) 3.5 V —
Maximum Power Dissipation (Ptot) 154 W —
Suhu Hubungan Operasi -40 °C to +150 °C —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
ESD Robustness (HBM) >2 kV (all pins) —
Technology CoolMOS P7 superjunction (7th generation) Superjunction (SJ)
Kemasan PG-VSON-4 (VSON-4, source-down) PG-TO263-3 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Qualification JEDEC industrial —
Polarity N-channel —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — CoolMOS P7 (600 V)
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DSS) — 600 V
Continuous Drain Current (I_D, T_C=25°C) — 12 A
On-Resistance R_DS(on) max (V_GS=10V) — 280 mOhm
Gate-Source Threshold V_GS(th) typ — 3.5 V
Power Dissipation P_D (T_C=25°C) — 53 W
Kiraan Pin — 3 (2 + Tab)
Gambaran Suhu Operasi — -55 °C to +150 °C (T_j max)
Configuration — Single N-Channel
Lead-Free — Yes
Generation — 7th Gen CoolMOS (successor to P6)

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