IPN70R360P7SATMA1 vs IPN70R600P7SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN70R360P7SATMA1 disebabkan oleh Infineon dan IPN70R600P7SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPN70R360P7SATMA1 | IPN70R600P7SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (Vdss) | 700 V | 700 V |
| Drain Current Continuous (Id, Tc=25°C) | 12.5 A | — |
| On-State Resistance Rds(on) max (Vgs=10V) | 360 mΩ | — |
| Power Dissipation (Pd, Tc=25°C) | 7.2 W | — |
| Gate-Source Voltage (Vgs) max | [DATA_NEEDED: Vgs max rating] | — |
| Gate Threshold Voltage (Vth) typ | 3.0 V | — |
| Technology | CoolMOS P7 Superjunction (SJ) | Superjunction (CoolMOS) N-Channel MOSFET |
| Channel Type | N-Channel | — |
| Kemasan | PG-SOT223 (3-pin, 2+Tab) | PG-SOT223 (3-pin + tab), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55°C to +150°C (junction) | -55°C to +150°C (Tj) |
| Storage Temperature Range | -55°C to +150°C | — |
| ESD Protection (HBM) | Class 1C | — |
| Drain Tab Connection | Pin 3 (Tab) | — |
| RoHS / REACH | Compliant (per Infineon product page) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS P7 |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (Id) @ Tc | — | 8.5 A |
| On-State Resistance Rds(on) max @ Vgs=10V | — | 600 mΩ |
| Power Dissipation (Pd) @ Tc | — | 6.9 W |
| Gate Threshold Voltage Vgs(th) typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge Qg typ | — | [DATA_NEEDED: Qg typical value] |
| Pin Configuration | — | Pin 1 Gate, Pin 2 Drain, Pin 3 Source, Tab Drain |
| RoHS Compliance | — | Compliant |
| Aras MSL | — | Level 1 (per JEDEC J-STD-020) |
| Family Position | — | 700V CoolMOS P7, 600mΩ class |