IPP100N12S305AKSA2 vs BSC014NE2LSIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP100N12S305AKSA2 disebabkan oleh Infineon dan BSC014NE2LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IPP100N12S305AKSA2 | BSC014NE2LSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | 25 V |
| Continuous Drain Current (ID, TC=25C) | 100 A | — |
| Continuous Drain Current (ID, TC=100C) | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD, TC=25C) | 300 W | — |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: total gate charge] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Gambaran Suhu Operasi | -55C to +175C (TJ) | — |
| Kemasan | PG-TO220-3-1 (Through Hole) | PG-TDSON-8-7 (SuperSO8) |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | N/A (Through Hole) | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Technology | — | N-Channel MOSFET (OptiMOS 25V) |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Ta) | — | 33 A |
| Continuous Drain Current (ID, Tc) | — | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| On-State Resistance RDS(on) | — | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 74 W |
| Suhu Hubungan Operasi | — | -55 °C to +150 °C |
| Lead-Free | — | Yes |