IPP100N12S305AKSA2 vs BSC014NE2LSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP100N12S305AKSA2 sa pamamagitan ng Infineon at BSC014NE2LSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPP100N12S305AKSA2 | BSC014NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | 25 V |
| Continuous Drain Current (ID, TC=25C) | 100 A | — |
| Continuous Drain Current (ID, TC=100C) | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD, TC=25C) | 300 W | — |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: total gate charge] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Hanay ng Temperature na Operasyon | -55C to +175C (TJ) | — |
| Packhaging | PG-TO220-3-1 (Through Hole) | PG-TDSON-8-7 (SuperSO8) |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Bilang ng Pin | 3 (Gate, Drain, Source) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | N/A (Through Hole) | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Technology | — | N-Channel MOSFET (OptiMOS 25V) |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Ta) | — | 33 A |
| Continuous Drain Current (ID, Tc) | — | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| On-State Resistance RDS(on) | — | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 74 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +150 °C |
| Lead-Free | — | Yes |