IPT017N12NM6ATMA1 vs ISK057N04LM6ATSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT017N12NM6ATMA1 disebabkan oleh Infineon dan ISK057N04LM6ATSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPT017N12NM6ATMA1 | ISK057N04LM6ATSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPT017N12NM6ATMA1 | — |
| Technology | OptiMOS 6 | OptiMOS 6 Trench |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 120 V | 40 V |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 331 A | — |
| On-Resistance RDS(on) max | 1.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 395 W | — |
| Kemasan | PG-HSOF-8 (TOLL) | PG-VSON-6-1 (PQFN 2x2 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55C to +175C | — |
| Kiraan Pin | 8 + tab | — |
| Packaging | Tape & Reel | — |
| Status RoHS | Compliant | Compliant |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Continuous Drain Current (ID) at Ta=25C | — | 15 A |
| Continuous Drain Current (ID) at Tc=25C | — | 64 A |
| Power Dissipation (PD) at Ta | — | 2.1 W |
| Power Dissipation (PD) at Tc | — | 39.1 W |
| On-Resistance RDS(on) at VGS=10V | — | [DATA_NEEDED: typical RDS(on) at 10V] |
| On-Resistance RDS(on) at VGS=4.5V | — | 8.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V (typ) |
| Total Gate Charge (Qg) at VGS=10V | — | 12 nC |
| Input Capacitance (Ciss) | — | 870 pF |
| Output Capacitance (Coss) | — | 290 pF |
| Reverse Transfer Capacitance (Crss) | — | 21 pF |
| Gambaran Suhu Operasi | — | -55C to +150C |