IPT017N12NM6ATMA1 vs ISK057N04LM6ATSA1 Comparison
Detailed side-by-side comparison of IPT017N12NM6ATMA1 by Infineon and ISK057N04LM6ATSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPT017N12NM6ATMA1 | ISK057N04LM6ATSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPT017N12NM6ATMA1 | — |
| Technology | OptiMOS 6 | OptiMOS 6 Trench |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 120 V | 40 V |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 331 A | — |
| On-Resistance RDS(on) max | 1.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 395 W | — |
| Package | PG-HSOF-8 (TOLL) | PG-VSON-6-1 (PQFN 2x2 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +175C | — |
| Pin Count | 8 + tab | — |
| Packaging | Tape & Reel | — |
| RoHS Status | Compliant | Compliant |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Continuous Drain Current (ID) at Ta=25C | — | 15 A |
| Continuous Drain Current (ID) at Tc=25C | — | 64 A |
| Power Dissipation (PD) at Ta | — | 2.1 W |
| Power Dissipation (PD) at Tc | — | 39.1 W |
| On-Resistance RDS(on) at VGS=10V | — | [DATA_NEEDED: typical RDS(on) at 10V] |
| On-Resistance RDS(on) at VGS=4.5V | — | 8.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V (typ) |
| Total Gate Charge (Qg) at VGS=10V | — | 12 nC |
| Input Capacitance (Ciss) | — | 870 pF |
| Output Capacitance (Coss) | — | 290 pF |
| Reverse Transfer Capacitance (Crss) | — | 21 pF |
| Operating Temperature Range | — | -55C to +150C |