IPT059N15N3ATMA1 vs IPD50N06S409ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT059N15N3ATMA1 disebabkan oleh Infineon dan IPD50N06S409ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPT059N15N3ATMA1 IPD50N06S409ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS™ 3 (trench) N-Channel MOSFET (OptiMOS)
Drain-Source Voltage (VDS) max 150 V —
Continuous Drain Current (ID) at TC=25°C 155 A —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 5.9 mΩ —
Power Dissipation (PD) at TC=25°C 375 W —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg typical] —
Kemasan PG-HSOF-8-1 (TOLL / TO-Leadless) PG-TO252-3-11 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +175 °C (TJ max 175 °C) —
Kiraan Pin 8 + exposed source tab 3 (2 + Tab)
Status RoHS Compliant Compliant
Aras MSL 1 —
Automotive Qualified No (industrial grade; non-AEC-Q) —
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc — 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V — 9 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc — 71 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Automotive Qualification — AEC-Q101
Lead-Free / Halogen-Free — [DATA_NEEDED]

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