IPT059N15N3ATMA1 vs IPD50N06S409ATMA2 比較
詳細並排比較 IPT059N15N3ATMA1 由 Infineon 與 IPD50N06S409ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPT059N15N3ATMA1 - 150V 5.9mΩ 155A OptiMOS 3 Power MOSFET | Infineon
IPT059N15N3ATMA1 ✓ 啟用中
規格比較
| 參數 | IPT059N15N3ATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | OptiMOS™ 3 (trench) | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) max | 150 V | — |
| Continuous Drain Current (ID) at TC=25°C | 155 A | — |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | 5.9 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 375 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: Qg typical] | — |
| 封裝 | PG-HSOF-8-1 (TOLL / TO-Leadless) | PG-TO252-3-11 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 °C to +175 °C (TJ max 175 °C) | — |
| 腳位數 | 8 + exposed source tab | 3 (2 + Tab) |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | — |
| Automotive Qualified | No (industrial grade; non-AEC-Q) | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| 工作接面溫度 | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |