IPTC017N12NM6ATMA1 vs ISC037N12NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPTC017N12NM6ATMA1 disebabkan oleh Infineon dan ISC037N12NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPTC017N12NM6ATMA1 ISC037N12NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 6, N-channel trench MOSFET OptiMOS 6 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 120 V —
Continuous Drain Current (ID, Ta) 32 A —
Continuous Drain Current (ID, Tc) 331 A —
On-State Resistance RDS(on) max 1.7 mΩ at VGS = 10 V —
Gate-Source Threshold VGS(th) 2.4 V (typ) —
Total Gate Charge QG 141 nC at VGS = 10 V —
Input Capacitance Ciss 2.4 nF at VDS = 60 V —
Output Capacitance Coss 11000 pF at VDS = 60 V —
Power Dissipation (Ta) 3.8 W —
Power Dissipation (Tc) 395 W —
Kemasan PG-HDSOP-16 (Surface Mount) PG-TDSON-8 FL (SuperSO8)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55 °C to +175 °C (TJ max) —
Gate Drive Voltage (recommended) 10 V —
Status RoHS Compliant Compliant
Drain-Source Voltage (Vds) — 120 V
Continuous Drain Current (Id) at Ta=25C — 19.2 A
Pulsed Drain Current (Idm) at Tc — 163 A
On-Resistance Rds(on) typ at Vgs=10V — 3.7 mOhm
Power Dissipation at Ta — 3 W
Power Dissipation at Tc — 214 W
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ — [DATA_NEEDED: Qg total]
Gambaran Suhu Operasi — -55C to +175C (junction)
Avalanche Energy Rated — Yes (single-pulse)
Aras MSL — 1 (per JEDEC J-STD-020)

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