IPTG025N15NM6ATMA1 vs IPT067N20NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPTG025N15NM6ATMA1 disebabkan oleh Infineon dan IPT067N20NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPTG025N15NM6ATMA1 IPT067N20NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 6 150 V (N-channel trench) Trench-gate OptiMOS 6 silicon
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 150 V 200 V
Continuous Drain Current (ID) at TA=25C 26 A 15.3 A
Continuous Drain Current (ID) at TC=25C 264 A (pulsed) 137 A
Power Dissipation (PD) at TA=25C 3.8 W 3.8 W
Power Dissipation (PD) at TC=25C 395 W 300 W
On-State Resistance RDS(on) typ 2.5 mOhm at VGS=10 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) value] —
Total Gate Charge Qg typ [DATA_NEEDED: Qg value] —
Kemasan PG-HSOG-8-1 (TOLG) PG-HSOF-8-1 (8-pin + exposed tab)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +175 C (typical for OptiMOS 6) -55C to +150C (junction)
Status RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Solder Joint Reliability Excellent - 30% smaller footprint than D2PAK —
Product Family — OptiMOS 6
Jenis Transistor — N-Channel MOSFET
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
On-Resistance RDS(on) typ — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) typ — [DATA_NEEDED: total gate charge]
Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free — Yes
Aras MSL — [DATA_NEEDED: MSL moisture sensitivity level]
Configuration — Single N-channel

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