IPTG025N15NM6ATMA1 vs IPT067N20NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPTG025N15NM6ATMA1 sa pamamagitan ng Infineon at IPT067N20NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon
IPTG025N15NM6ATMA1 ✓ NakahandaInfineon
IPT067N20NM6ATMA1 - 200V 137A OptiMOS 6 Power MOSFET | Infineon
IPT067N20NM6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPTG025N15NM6ATMA1 | IPT067N20NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 6 150 V (N-channel trench) | Trench-gate OptiMOS 6 silicon |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | 200 V |
| Continuous Drain Current (ID) at TA=25C | 26 A | 15.3 A |
| Continuous Drain Current (ID) at TC=25C | 264 A (pulsed) | 137 A |
| Power Dissipation (PD) at TA=25C | 3.8 W | 3.8 W |
| Power Dissipation (PD) at TC=25C | 395 W | 300 W |
| On-State Resistance RDS(on) typ | 2.5 mOhm at VGS=10 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg value] | — |
| Packhaging | PG-HSOG-8-1 (TOLG) | PG-HSOF-8-1 (8-pin + exposed tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (typical for OptiMOS 6) | -55C to +150C (junction) |
| Tindminan RoHS | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | — |
| Solder Joint Reliability | Excellent - 30% smaller footprint than D2PAK | — |
| Product Family | — | OptiMOS 6 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| On-Resistance RDS(on) typ | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: total gate charge] |
| Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical value] |
| Lead-Free | — | Yes |
| Level ng MSL | — | [DATA_NEEDED: MSL moisture sensitivity level] |
| Configuration | — | Single N-channel |