IQD005N04NM6ATMA1 vs IQE220N15NM5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQD005N04NM6ATMA1 disebabkan oleh Infineon dan IQE220N15NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IQD005N04NM6ATMA1 | IQE220N15NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 Power-Transistor | OptiMOS 5 Power-Transistor |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta=25C | 58 A | — |
| Pulsed Drain Current (IDM) at Tc | 610 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 0.5 mOhm | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| Kemasan | PG-TSON-8-9 (PQFN 5x6 mm) | PG-TSON-8-5 (Source-Down) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Technology | OptiMOS 6 trench MOSFET | Trench MOSFET (OptiMOS 5) |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | 1 |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at Ta | — | 7 A |
| Continuous Drain Current (ID) at Tc | — | 44 A |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| RDS(on) Max at VGS=10V | — | 22 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 4.6 V (typ at 46 µA) |
| Total Gate Charge (Qg) | — | 14.4 nC at 10 V |
| Input Capacitance (Ciss) | — | 14 pF |
| Output Capacitance (Coss) | — | 340 pF |
| Konfigurasi Output | — | Single N-Channel |
| Suhu Operasi | — | -55C to +150C (junction) |