IQDH88N06LM5CGSCATMA1 vs IQE050N08NM5CGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH88N06LM5CGSCATMA1 disebabkan oleh Infineon dan IQE050N08NM5CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQDH88N06LM5CGSCATMA1 IQE050N08NM5CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 5 (trench) OptiMOS 5 (Source-Down)
Drain-Source Voltage (V(BR)DSS) 60 V —
Continuous Drain Current (Ta=25°C) 42 A —
Arus Kumpal Tetap (TC=25°C) 447 A —
On-Resistance RDS(on) typical @ VGS=10V 0.86 mΩ —
Power Dissipation (Ta=25°C) 3 W —
Pembuangan Kuasa (TC=25°C) 333 W —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical] —
Gate Charge Qg typical [DATA_NEEDED: Qg typical nC] —
Gambaran Suhu Operasi -55°C to +175°C (TJ) —
Kemasan PG-WHTFN-9-U02 (PQFN 5x6) PG-TTFN-9-1 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 9 (with exposed pad) —
Cooling Dual-side cooling capable —
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Polarity N-Channel —
Configuration Single —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (Ta) — 16 A
Continuous Drain Current (Tc) — 101 A
On-Resistance RDS(on) Max — 5.0 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 100 W
Gate Threshold Vgs(th) Typ — [DATA_NEEDED: Vgs(th) typical value]
Suhu Operasi — -55°C to +175°C (TJ max)
Total Gate Charge Qg Typ — [DATA_NEEDED: total gate charge Qg typical]

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