IQDH88N06LM5CGSCATMA1 vs IQE050N08NM5CGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQDH88N06LM5CGSCATMA1 sa pamamagitan ng Infineon at IQE050N08NM5CGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon
IQDH88N06LM5CGSCATMA1 ✓ NakahandaInfineon
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
IQE050N08NM5CGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQDH88N06LM5CGSCATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (Source-Down) |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| Patuloy na Drain Current (TC=25°C) | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| Pwersang Pinahihigpit (TC=25°C) | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C (TJ) | — |
| Packhaging | PG-WHTFN-9-U02 (PQFN 5x6) | PG-TTFN-9-1 (Surface Mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | Compliant |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (Ta) | — | 16 A |
| Continuous Drain Current (Tc) | — | 101 A |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 100 W |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Temperature na Operasyon | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |