IQE004NE1LM7CGATMA1 vs ISC058N04NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE004NE1LM7CGATMA1 disebabkan oleh Infineon dan ISC058N04NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE004NE1LM7CGATMA1 ISC058N04NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Technology N-Channel Trench Power MOSFET OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 15 V 40 V
Continuous Drain Current (ID, TA=25C) 58 A —
Continuous Drain Current (ID, TC=25C) 379 A —
Power Dissipation (TA=25C) 2.1 W 3 W
Power Dissipation (TC=25C) 89 W 42 W
On-Resistance RDS(on) max 0.45 mOhm at VGS=10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Kemasan PG-TTFN-9-3 (surface mount) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C (junction) —
Status RoHS Compliant —
Aras MSL [DATA_NEEDED: MSL rating] —
Packaging Tape & Reel (CGATMA1 suffix) —
Polarization N-Channel —
Product Family — OptiMOS 5 40V Normal Level
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc=25C) — 63 A
Continuous Drain Current (ID, Ta=25C) — 17 A
On-Resistance Rds(on) max @ VGS=10V, ID=31A — 5.8 mOhm
Gate Threshold Voltage VGS(th) typ — 3.4 V
Gambaran Suhu Operasi — -55C to +175C
RoHS Compliance — RoHS Compliant
MSL (Moisture Sensitivity Level) — MSL per JEDEC J-STD-020
Gate Drive Level — Normal Level (10V VGS recommended)

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