IQE004NE1LM7CGATMA1 vs ISC058N04NM5ATMA1 比較

詳細並排比較 IQE004NE1LM7CGATMA1 由 Infineon 與 ISC058N04NM5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 ✓ 啟用中

規格比較

參數 IQE004NE1LM7CGATMA1 ISC058N04NM5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Technology N-Channel Trench Power MOSFET OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 15 V 40 V
Continuous Drain Current (ID, TA=25C) 58 A —
Continuous Drain Current (ID, TC=25C) 379 A —
Power Dissipation (TA=25C) 2.1 W 3 W
Power Dissipation (TC=25C) 89 W 42 W
On-Resistance RDS(on) max 0.45 mOhm at VGS=10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
封裝 PG-TTFN-9-3 (surface mount) PG-TDSON-8 FL (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
工作溫度 -55C to +150C (junction) —
RoHS 狀態 Compliant —
MSL 等級 [DATA_NEEDED: MSL rating] —
Packaging Tape & Reel (CGATMA1 suffix) —
Polarization N-Channel —
Product Family — OptiMOS 5 40V Normal Level
電晶體類型 — N-Channel MOSFET
Continuous Drain Current (ID, Tc=25C) — 63 A
Continuous Drain Current (ID, Ta=25C) — 17 A
On-Resistance Rds(on) max @ VGS=10V, ID=31A — 5.8 mOhm
Gate Threshold Voltage VGS(th) typ — 3.4 V
工作溫度範圍 — -55C to +175C
RoHS Compliance — RoHS Compliant
MSL (Moisture Sensitivity Level) — MSL per JEDEC J-STD-020
Gate Drive Level — Normal Level (10V VGS recommended)

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