IQE008N03LM5CGSCATMA1 vs BSC076N04NDATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE008N03LM5CGSCATMA1 disebabkan oleh Infineon dan BSC076N04NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE008N03LM5CGSCATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Configuration | Dual N-Channel MOSFET Array | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | — |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | 4 V (max, typical) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Gambaran Suhu Operasi | -55C to +150C (junction) | — |
| Kemasan | PG-WHTFN-9 (WHTFN) | — |
| Jenis Pemasangan | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | Trench MOSFET (OptiMOS 3) |
| Polarity | N-Channel | — |
| Bilangan Pin | 9 (WHTFN with exposed thermal pads) | — |
| Aras MSL | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | — |
| Status RoHS | Compliant | — |
| Boson Bebas | Yes (Infineon standard for OptiMOS 5) | — |
| Series | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Kemasan / Case | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |