IQE008N03LM5CGSCATMA1 vs IQE012N03LM5CGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE008N03LM5CGSCATMA1 disebabkan oleh Infineon dan IQE012N03LM5CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE008N03LM5CGSCATMA1 | IQE012N03LM5CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | — |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Gambaran Suhu Operasi | -55C to +150C (junction) | — |
| Kemasan | PG-WHTFN-9 (WHTFN) | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) |
| Jenis Pemasangan | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | — |
| Polarity | N-Channel | — |
| Bilangan Pin | 9 (WHTFN with exposed thermal pads) | — |
| Aras MSL | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | 1 |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Yes (Infineon standard for OptiMOS 5) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID, Ta) | — | 34 A |
| Pulsed Drain Current (IDM, Tc) | — | 224 A |
| On-Resistance RDS(on), typ | — | 1.20 mOhm |
| Gate-Source Threshold VGS(th) | — | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| Technology / Process | — | OptiMOS 5 trench |
| Suhu Operasi | — | -55 C to +150 C (TJ) |
| Gate Drive (recommended) | — | 10 V (logic-level compatible) |