IQE008N03LM5SCATMA1 vs IQE008N03LM5CGSCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE008N03LM5SCATMA1 disebabkan oleh Infineon dan IQE008N03LM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE008N03LM5SCATMA1 | IQE008N03LM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 |
| Technology | Trench MOSFET (N-Channel) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 252 A | — |
| On-Resistance (RDS(on)) max | 0.85 mΩ at VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | 2 V (typ) |
| Gate Drive Voltage | 10 V (recommended) | — |
| Kemasan | PG-WHSON-8 (Source-Down) | PG-WHTFN-9 (WHTFN) |
| Configuration | Single N-Channel | Dual N-Channel MOSFET Array |
| Jenis Pemasangan | Surface Mount | Surface Mount (top + bottom cooling) |
| Cooling Architecture | Source-Down, dual-side cooling | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C | -55C to +150C (junction) |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) |
| Status RoHS | Compliant | Compliant |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) Max | — | 252 A (per channel, case-temperature limited) |
| On-Resistance (RDS(on)) Max | — | 0.85 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS maximum rating] |
| Polarity | — | N-Channel |
| Bilangan Pin | — | 9 (WHTFN with exposed thermal pads) |
| Boson Bebas | — | Yes (Infineon standard for OptiMOS 5) |