IQE018N06NM6CGATMA1 vs IQE031N08LM6CGSCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE018N06NM6CGATMA1 disebabkan oleh Infineon dan IQE031N08LM6CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE018N06NM6CGATMA1 IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE018N06NM6CGATMA1 IQE031N08LM6CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 60V OptiMOS 6 (40 V to 100 V)
Channel Type N-Channel —
Drain-Source Voltage (V_DS) 60 V —
Continuous Drain Current (I_D, Tc) 178 A —
Continuous Drain Current (I_D, Ta) 25 A —
R_DS(on) max (V_GS=10 V) 1.8 mΩ —
Gate Threshold Voltage (V_GS(th)) 3.3 V (logic-level compatible) —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 125 W —
Kemasan PG-TTFN-9-3 (TOLL/TTFN) PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (junction) -55 C to +175 C (junction, typical for OptiMOS 6)
Technology Trench MOSFET, OptiMOS 6 —
RoHS Compliance Compliant —
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS max) — 80 V
Continuous Drain Current (ID) at Ta=25C — 18 A
Continuous Drain Current (ID) at Tc — 127 A
Power Dissipation (PD) at Ta=25C — 2.5 W
Power Dissipation (PD) at Tc — 125 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
On-State Resistance RDS(on) max — [DATA_NEEDED: RDS(on) at VGS=10 V]
Gate Drive Level — Logic-level
Avalanche Tested — 100% avalanche tested
Aras MSL — 1 (per JEDEC J-STD-020, typical for Infineon PQFN)
Status RoHS — Compliant
Lead-Free — Yes

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