IQE022N06LM5CGATMA1 vs IRFH5015TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE022N06LM5CGATMA1 disebabkan oleh Infineon dan IRFH5015TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQE022N06LM5CGATMA1 IRFH5015TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS 5 —
Technology N-Channel Power MOSFET (Enhancement Mode) IR MOSFET (HEXFET)
Drain-Source Voltage (V_DS) 60 V —
Continuous Drain Current (I_D) at T_A=25C 24 A —
Continuous Drain Current (I_D) at T_C=25C 151 A —
R_DS(on) (typical, V_GS=10V) 2.2 mΩ —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) value] —
Total Gate Charge (Q_G) [DATA_NEEDED: Q_G value] —
Power Dissipation (T_A) 2.5 W —
Power Dissipation (T_C) 100 W —
Gambaran Suhu Operasi -55C to +150C —
Kemasan PG-TTFN-9-3 (PQFN 3.3x3.3 mm) 8-PQFN (5x6) SuperSO8
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 9 (with exposed thermal pad) —
Status RoHS Compliant Compliant
Lead-Free Yes —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at TA=25C — 10 A
Continuous Drain Current (ID) at TC=25C — 56 A
On-Resistance (RDS(on)) max — 31 mOhm
Total Gate Charge (Qg) — 33 nC
Power Dissipation (TA=25C) — 3.6 W
Power Dissipation (TC=25C) — 156 W
Gate Drive Voltage (VGS recommended) — 10 V
Configuration — Single with built-in body diode
Suhu Operasi — -55C to +150C (TJ max)

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