IQE022N06LM5CGSCATMA1 vs IQDH29NE2LM5CGSCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE022N06LM5CGSCATMA1 disebabkan oleh Infineon dan IQDH29NE2LM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IQE022N06LM5CGSCATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Continuous Drain Current (TC) | 151 A | — |
| Continuous Drain Current (TA) | 24 A | — |
| Maximum Power Dissipation (TC) | 100 W | — |
| Maximum Power Dissipation (TA) | 2.5 W | — |
| RDS(on) Maximum at VGS=10V | 2.2 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | — |
| Kemasan | PG-WHTFN-9 (5x6 mm) | PG-WHTFN-9-U02 (WHTFN EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Technology Family | OptiMOS 5 | — |
| Kiraan Pin | 9 (PG-WHTFN-9) | 9 |
| Aras MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Technology | — | OptiMOS 5 Power-Transistor |
| Continuous Drain Current (Ta) | — | 75 A |
| Continuous Drain Current (Tc) | — | 789 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 278 W |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2 V (typ) |
| Cooling | — | Dual-side exposed pad (top + bottom) |