IQE022N06LM5CGSCATMA1 vs IQDH29NE2LM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE022N06LM5CGSCATMA1 by Infineon and IQDH29NE2LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE022N06LM5CGSCATMA1
IQE022N06LM5CGSCATMA1 - 60V 151A OptiMOS 5 N-FET | Infineon
IQE022N06LM5CGSCATMA1 β ActiveInfineon
IQDH29NE2LM5CGSCATMA1
IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΞ© MOSFET | Infineon
IQDH29NE2LM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE022N06LM5CGSCATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $1.84 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Continuous Drain Current (TC) | 151 A | β |
| Continuous Drain Current (TA) | 24 A | β |
| Maximum Power Dissipation (TC) | 100 W | β |
| Maximum Power Dissipation (TA) | 2.5 W | β |
| RDS(on) Maximum at VGS=10V | 2.2 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | β |
| Package | PG-WHTFN-9 (5x6 mm) | PG-WHTFN-9-U02 (WHTFN EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | β |
| Technology Family | OptiMOS 5 | β |
| Pin Count | 9 (PG-WHTFN-9) | 9 |
| MSL Level | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Technology | β | OptiMOS 5 Power-Transistor |
| Continuous Drain Current (Ta) | β | 75 A |
| Continuous Drain Current (Tc) | β | 789 A |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 278 W |
| Maximum On-Resistance RDS(on) | β | 0.29 mΞ© |
| Gate Threshold Voltage VGS(th) | β | 2 V (typ) |
| Cooling | β | Dual-side exposed pad (top + bottom) |