IQE022N06LM5CGSCATMA1 vs IQDH29NE2LM5CGSCATMA1 比較
詳細並排比較 IQE022N06LM5CGSCATMA1 由 Infineon 與 IQDH29NE2LM5CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQE022N06LM5CGSCATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Continuous Drain Current (TC) | 151 A | — |
| Continuous Drain Current (TA) | 24 A | — |
| Maximum Power Dissipation (TC) | 100 W | — |
| Maximum Power Dissipation (TA) | 2.5 W | — |
| RDS(on) Maximum at VGS=10V | 2.2 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | — |
| 封裝 | PG-WHTFN-9 (5x6 mm) | PG-WHTFN-9-U02 (WHTFN EP) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +150C | — |
| Technology Family | OptiMOS 5 | — |
| 腳位數 | 9 (PG-WHTFN-9) | 9 |
| MSL 等級 | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| RoHS 狀態 | Compliant | Compliant |
| Technology | — | OptiMOS 5 Power-Transistor |
| Continuous Drain Current (Ta) | — | 75 A |
| Continuous Drain Current (Tc) | — | 789 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 278 W |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2 V (typ) |
| Cooling | — | Dual-side exposed pad (top + bottom) |