IQE050N08NM5CGSCATMA1 vs ISC015N06NM5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE050N08NM5CGSCATMA1 disebabkan oleh Infineon dan ISC015N06NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
IQE050N08NM5CGSCATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IQE050N08NM5CGSCATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC | 99 A | — |
| Continuous Drain Current (ID) at TA | 16 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 5.0 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.8 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation at TC (PD) | 100 W | — |
| Total Power Dissipation at TA (PD) | 2.5 W | — |
| Gambaran Suhu Operasi | -55C to +175C (junction, typical) | -55 C to +175 C |
| Kemasan | PG-WHTFN-9-1 (Source-Down) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-free, RoHS compliant | — |
| Aras MSL | 1 | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Status RoHS | — | Compliant |
| MSL (Moisture Sensitivity Level) | — | 1 |