IQE220N15NM5ATMA1 vs IQE220N15NM5SCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE220N15NM5ATMA1 disebabkan oleh Infineon dan IQE220N15NM5SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE220N15NM5ATMA1 IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon

IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon

IQE220N15NM5ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE220N15NM5ATMA1 IQE220N15NM5SCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 Power-Transistor —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 150 V —
Continuous Drain Current (ID) at Ta 7 A 7 A
Continuous Drain Current (ID) at Tc 44 A 44 A
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 100 W —
RDS(on) Max at VGS=10V 22 mΩ —
Gate Threshold Voltage (VGS(th)) 4.6 V (typ at 46 µA) —
Total Gate Charge (Qg) 14.4 nC at 10 V —
Input Capacitance (Ciss) 14 pF —
Output Capacitance (Coss) 340 pF —
Konfigurasi Output Single N-Channel —
Kemasan PG-TSON-8-5 (Source-Down) PG-WHSON-8-1 (Source-Down)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C (junction) —
Technology Trench MOSFET (OptiMOS 5) OptiMOS 5 (Trench >=100V)
Status RoHS Compliant Compliant
Aras MSL 1 1
FET Type — N-Channel
Drain-Source Voltage (VDS) — 150 V
On-State Resistance (RDS(on)) max — 22 mOhm
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 100 W
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Gambaran Suhu Operasi — -55C to +150C (junction)
Bilangan Pin — 8
Avalanche Rated — Yes
Configuration — Single

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