IQEH46NE2LM7UCGSCATMA1 vs IQEH50NE2LM7ZCGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH46NE2LM7UCGSCATMA1 disebabkan oleh Infineon dan IQEH50NE2LM7ZCGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQEH46NE2LM7UCGSCATMA1 IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQEH46NE2LM7UCGSCATMA1 IQEH50NE2LM7ZCGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 7 (trench) OptiMOS 7 (Trench-Gate)
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at TC 440 A —
Continuous Drain Current (ID) at TA 57 A —
Power Dissipation at TA 2.5 W —
Power Dissipation at TC 150 W —
Maximum On-Resistance (RDS(on)) 0.46 mOhm —
Gate Threshold Voltage (VGS(th)) 2 V —
Kemasan PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) PG-TTFN-9-3
Jenis Pemasangan Surface Mount Surface Mount
Polarity / Channel Type Single N-Channel N-Channel
Operating Mode Enhancement-mode —
Topology Suitability Hard- and soft-switching —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 Power-Transistor
Drain-Source Voltage (Vds) Max — 25 V
Continuous Drain Current (Ta) — 54 A
Continuous Drain Current (Tc) — 422 A
Maximum On-Resistance (Rds(on)) — 0.5 mOhm
Gate Threshold Voltage (Vgs(th)) — 1.7 V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 150 W
Maximum Junction Temperature — +175 degrees C
Gambaran Suhu Operasi — -55 degrees C to +175 degrees C
Qualification — Industrial grade per Infineon datasheet

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