IQEH50NE2LM7UCGSCATMA1 vs IQE008N03LM5CGSCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH50NE2LM7UCGSCATMA1 disebabkan oleh Infineon dan IQE008N03LM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQEH50NE2LM7UCGSCATMA1 IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 ✓ Aktif
Infineon
IQE008N03LM5CGSCATMA1 IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon

IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon

IQE008N03LM5CGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQEH50NE2LM7UCGSCATMA1 IQE008N03LM5CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor OptiMOS 5
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) Max 25 V 30 V
Continuous Drain Current (ID) at TA 54 A —
Continuous Drain Current (ID) at TC 422 A —
RDS(on) Max 0.5 mΩ —
Gate Threshold Voltage (VGS(th)) typ 2 V —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 150 W —
Maximum Junction Temperature 175 °C —
Kemasan PG-WHTFN-9-1 (surface mount) PG-WHTFN-9 (WHTFN)
Jenis Pemasangan Surface Mount Surface Mount (top + bottom cooling)
Series OptiMOS 7 —
Technology Silicon N-Channel Power MOSFET Trench MOSFET (OptiMOS 5)
Configuration — Dual N-Channel MOSFET Array
Continuous Drain Current (ID) Max — 252 A (per channel, case-temperature limited)
On-Resistance (RDS(on)) Max — 0.85 mOhm at VGS = 10 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS maximum rating]
Gate Threshold Voltage (VGS(th)) — 2 V (typ)
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Gambaran Suhu Operasi — -55C to +150C (junction)
Polarity — N-Channel
Bilangan Pin — 9 (WHTFN with exposed thermal pads)
Aras MSL — 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages)
Status RoHS — Compliant
Boson Bebas — Yes (Infineon standard for OptiMOS 5)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga