IQEH50NE2LM7UCGSCATMA1 vs IQE008N03LM5CGSCATMA1 比較
詳細並排比較 IQEH50NE2LM7UCGSCATMA1 由 Infineon 與 IQE008N03LM5CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQEH50NE2LM7UCGSCATMA1 | IQE008N03LM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS 5 |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 25 V | 30 V |
| Continuous Drain Current (ID) at TA | 54 A | — |
| Continuous Drain Current (ID) at TC | 422 A | — |
| RDS(on) Max | 0.5 mΩ | — |
| Gate Threshold Voltage (VGS(th)) typ | 2 V | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 150 W | — |
| Maximum Junction Temperature | 175 °C | — |
| 封裝 | PG-WHTFN-9-1 (surface mount) | PG-WHTFN-9 (WHTFN) |
| 安裝類型 | Surface Mount | Surface Mount (top + bottom cooling) |
| Series | OptiMOS 7 | — |
| Technology | Silicon N-Channel Power MOSFET | Trench MOSFET (OptiMOS 5) |
| Configuration | — | Dual N-Channel MOSFET Array |
| Continuous Drain Current (ID) Max | — | 252 A (per channel, case-temperature limited) |
| On-Resistance (RDS(on)) Max | — | 0.85 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS maximum rating] |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typ) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| 工作溫度範圍 | — | -55C to +150C (junction) |
| Polarity | — | N-Channel |
| 腳位數 | — | 9 (WHTFN with exposed thermal pads) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) |
| RoHS 狀態 | — | Compliant |
| 無鹵素 | — | Yes (Infineon standard for OptiMOS 5) |