IQEH50NE2LM7ZCGATMA1 vs ISCH99N04NM7VATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH50NE2LM7ZCGATMA1 disebabkan oleh Infineon dan ISCH99N04NM7VATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQEH50NE2LM7ZCGATMA1 | ISCH99N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | — |
| Gambaran Suhu Operasi | -55 degrees C to +175 degrees C | — |
| Kemasan | PG-TTFN-9-3 | PG-TDSON-8 (TDSON-8 FL) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | OptiMOS 7 Trench Power MOSFET |
| Status RoHS | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | — |
| Series | — | OptiMOS 7 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current at Ta (I_D) | — | 40 A |
| Pulsed Drain Current at Tc (I_DM) | — | 284 A |
| Power Dissipation at Ta (P_D) | — | 3 W |
| Power Dissipation at Tc (P_D) | — | 150 W |
| Gate Threshold Voltage (V_th) | — | Up to 3.2 V |
| Operating Mode | — | Enhancement-mode |
| Target Application | — | 12 V to 48 V Motor Drives |