IRF1310NPBF vs IRF540ZPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF1310NPBF disebabkan oleh Infineon dan IRF540ZPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF1310NPBF IRF540ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 42 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM value] —
Gate-Source Voltage (VGS) max ±20 V —
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V 36 mOhm —
Total Gate Charge (Qg) 73.3 nC —
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs value] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd value] —
Power Dissipation (PD) at TC=25C 160 W —
Maximum Junction Temperature 175 C 175 C
Gambaran Suhu Operasi -55 C to +175 C —
Kemasan TO-220AB (through-hole) TO-220AB (through-hole, 3-lead)
Jenis Pemasangan Through Hole Through Hole
Technology HEXFET HEXFET Power MOSFET (N-Channel DMOS)
Status RoHS Compliant (PBF suffix) Compliant
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF540ZPBF
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D) at T_C=25C — 36 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS maximum rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
On-Resistance R_DS(on) max at V_GS=10V — 26.5 mOhm
Total Gate Charge (Q_g) — 42 nC
Power Dissipation (P_D) at T_C=25C — 92 W
Gambaran Suhu Hubungan Operasi — -55 C to +175 C
Kiraan Pin — 3 (Gate, Drain, Source)
Lead-Free — Yes
Automotive Qualified — Yes (per datasheet description)

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