IRF150P220AKMA1 vs IRFZ34NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF150P220AKMA1 disebabkan oleh Infineon dan IRFZ34NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF150P220AKMA1 IRFZ34NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRF150P220AKMA1 —
Technology StrongIRFET HEXFET (Planar DMOS, 5th generation)
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS max) 150 V —
Continuous Drain Current (ID) at Tc=25C 203 A —
On-Resistance (RDS(on) max) at VGS=10V 2.7 mOhm —
Gate-Source Voltage (VGS max) [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typ] —
Power Dissipation (Pd) at Tc=25C 556 W —
Power Dissipation (Pd) at Ta=25C 3.8 W —
Gambaran Suhu Operasi -55C to +175C -55 C to +175 C
Kemasan TO-247-3 (PG-TO247-3) TO-220AB (3-pin + tab, through-hole)
Jenis Pemasangan Through Hole Through Hole
Terminal Finish Tin (Sn) —
JESD-609 Code e3 —
Status RoHS Compliant Compliant
Lead-Free Yes —
Part Status — Active
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (V_DSS) — 55 V
Continuous Drain Current (I_D) at Tc=25C — 29 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (P_D) at Tc=25C — 68 W
On-Resistance R_DS(on) max at V_GS=10V — 40 mOhm
Gate Charge (Q_g) typ — 22.7 nC
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: gate threshold voltage]
Input Capacitance (C_iss) typ — [DATA_NEEDED: input capacitance]
Maximum Junction Temperature — 175 C
Lead-Free Status — Yes (Pb-free, RoHS compliant)
Qualification — JEDEC standard
Configuration — Single N-Channel, 3-pin (3+tab)

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