IRF150P220AKMA1 vs IRFZ34NPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF150P220AKMA1 sa pamamagitan ng Infineon at IRFZ34NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRF150P220AKMA1 - 150V 203A StrongIRFET Power MOSFET | Infineon
IRF150P220AKMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IRF150P220AKMA1 | IRFZ34NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF150P220AKMA1 | — |
| Technology | StrongIRFET | HEXFET (Planar DMOS, 5th generation) |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS max) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 203 A | — |
| On-Resistance (RDS(on) max) at VGS=10V | 2.7 mOhm | — |
| Gate-Source Voltage (VGS max) | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (Pd) at Tc=25C | 556 W | — |
| Power Dissipation (Pd) at Ta=25C | 3.8 W | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55 C to +175 C |
| Packhaging | TO-247-3 (PG-TO247-3) | TO-220AB (3-pin + tab, through-hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Terminal Finish | Tin (Sn) | — |
| JESD-609 Code | e3 | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Part Status | — | Active |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V_DSS) | — | 55 V |
| Continuous Drain Current (I_D) at Tc=25C | — | 29 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc=25C | — | 68 W |
| On-Resistance R_DS(on) max at V_GS=10V | — | 40 mOhm |
| Gate Charge (Q_g) typ | — | 22.7 nC |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Input Capacitance (C_iss) typ | — | [DATA_NEEDED: input capacitance] |
| Maximum Junction Temperature | — | 175 C |
| Lead-Free Status | — | Yes (Pb-free, RoHS compliant) |
| Qualification | — | JEDEC standard |
| Configuration | — | Single N-Channel, 3-pin (3+tab) |